Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

We review the recent developments in the electric field control of magnetism in multiferroic
heterostructures, which consist of heterogeneous materials systems where a …

The quest for novel low-dissipation devices is one of the most critical for the future of
semiconductor technology and nano-systems. The development of a low-power, universal …

The control of magnetism by electric fields is an important goal for the future development of
low-power spintronics. Various approaches have been proposed on the basis of either …

The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …

We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …

Using resonant phenomena to exert coherent control over electron spin dynamics could
enable more-energy-efficient spintronic devices and related technologies. Yet, achieving …

We review the recent progress in the development of magnetoelectric RAM (MeRAM) based
on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the …

Abstract Domain wall motion in materials exhibiting perpendicular magnetic anisotropy has
been the subject of intensive research because of its large potential for future spintronic …

In this work, we experimentally study the temperature dependence of the perpendicular
magnetic anisotropy (PMA) and of the voltage-controlled magnetic anisotropy (VCMA) in …