The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review

HP Phan, DV Dao, K Nakamura… - Journal of …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) is one of the most promising materials for applications in harsh
environments thanks to its excellent electrical, mechanical, and chemical properties. The …

One-dimensional SiC nanostructures: Designed growth, properties, and applications

S Chen, W Li, X Li, W Yang - Progress in Materials Science, 2019 - Elsevier
Silicon carbide (SiC) is recognized as one of the shining stars of third generation
semiconductors, because of its preeminent characteristics, for instance, outstanding …

Polymer-derived SiBCN ceramic pressure sensor with excellent sensing performance

G Shao, J Jiang, M Jiang, J Su, W Liu, H Wang… - Journal of Advanced …, 2020 - Springer
Pressure measurement with excellent stability and long time durability is highly desired,
especially at high temperature and harsh environments. A polymer-derived silicoboron …

Self-powered broadband (UV-NIR) photodetector based on 3C-SiC/Si heterojunction

ARM Foisal, T Dinh, VT Nguyen… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from
smart cities to optical communications. Herein, we report on a selfpowered broadband [UV …

Ultralong SiC/SiO2 Nanowires: Simple Gram-Scale Production and Their Effective Blue-Violet Photoluminescence and Microwave Absorption Properties

M Zhang, J Zhao, Z Li, S Ding, Y Wang… - ACS Sustainable …, 2018 - ACS Publications
In the present work, high-quality ultralong SiC/SiO2 nanowires have been prepared via
simple Ni-assisted chemical vapor deposition approach. Systematic characterization results …

[HTML][HTML] Design of SiC-doped piezoresistive pressure sensor for high-temperature applications

T Wejrzanowski, E Tymicki, T Plocinski, JJ Bucki… - Sensors, 2021 - mdpi.com
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material
doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of …

Vertical piezo-optoelectronic coupling in a 3C-SiC/Si heterostructure for self-powered and highly sensitive mechanical sensing

CT Nguyen, D Gia Ninh, TH Nguyen… - … Applied Materials & …, 2023 - ACS Publications
This paper presents a novel self-powered mechanical sensing based on the vertical piezo-
optoelectronic coupling in a 3C-SiC/Si heterojunction. The vertical piezo-optoelectronic …

Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

HP Phan, T Dinh, T Kozeki, A Qamar, T Namazu… - Scientific reports, 2016 - nature.com
Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS)
applications in harsh environ-ments and bioapplications thanks to its large band gap …

Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

DK Kim, KS Jeong, YS Kang, HK Kang, SW Cho… - Scientific reports, 2016 - nature.com
The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-
assisted oxidation were investigated. To investigate the changes in the electronic structure …

[HTML][HTML] Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing

CT Nguyen, EW Streed, T Dinh, NT Nguyen… - Applied Materials …, 2024 - Elsevier
This paper investigates for the first time the piezojunction effect in heterojunctions under
external bias for ultrasensitive strain sensing. As a proof of concept, we used sensing …