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The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review
Silicon carbide (SiC) is one of the most promising materials for applications in harsh
environments thanks to its excellent electrical, mechanical, and chemical properties. The …
environments thanks to its excellent electrical, mechanical, and chemical properties. The …
One-dimensional SiC nanostructures: Designed growth, properties, and applications
S Chen, W Li, X Li, W Yang - Progress in Materials Science, 2019 - Elsevier
Silicon carbide (SiC) is recognized as one of the shining stars of third generation
semiconductors, because of its preeminent characteristics, for instance, outstanding …
semiconductors, because of its preeminent characteristics, for instance, outstanding …
Polymer-derived SiBCN ceramic pressure sensor with excellent sensing performance
G Shao, J Jiang, M Jiang, J Su, W Liu, H Wang… - Journal of Advanced …, 2020 - Springer
Pressure measurement with excellent stability and long time durability is highly desired,
especially at high temperature and harsh environments. A polymer-derived silicoboron …
especially at high temperature and harsh environments. A polymer-derived silicoboron …
Self-powered broadband (UV-NIR) photodetector based on 3C-SiC/Si heterojunction
Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from
smart cities to optical communications. Herein, we report on a selfpowered broadband [UV …
smart cities to optical communications. Herein, we report on a selfpowered broadband [UV …
Ultralong SiC/SiO2 Nanowires: Simple Gram-Scale Production and Their Effective Blue-Violet Photoluminescence and Microwave Absorption Properties
M Zhang, J Zhao, Z Li, S Ding, Y Wang… - ACS Sustainable …, 2018 - ACS Publications
In the present work, high-quality ultralong SiC/SiO2 nanowires have been prepared via
simple Ni-assisted chemical vapor deposition approach. Systematic characterization results …
simple Ni-assisted chemical vapor deposition approach. Systematic characterization results …
[HTML][HTML] Design of SiC-doped piezoresistive pressure sensor for high-temperature applications
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material
doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of …
doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of …
Vertical piezo-optoelectronic coupling in a 3C-SiC/Si heterostructure for self-powered and highly sensitive mechanical sensing
This paper presents a novel self-powered mechanical sensing based on the vertical piezo-
optoelectronic coupling in a 3C-SiC/Si heterojunction. The vertical piezo-optoelectronic …
optoelectronic coupling in a 3C-SiC/Si heterojunction. The vertical piezo-optoelectronic …
Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating
Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS)
applications in harsh environ-ments and bioapplications thanks to its large band gap …
applications in harsh environ-ments and bioapplications thanks to its large band gap …
Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation
The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-
assisted oxidation were investigated. To investigate the changes in the electronic structure …
assisted oxidation were investigated. To investigate the changes in the electronic structure …
[HTML][HTML] Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing
This paper investigates for the first time the piezojunction effect in heterojunctions under
external bias for ultrasensitive strain sensing. As a proof of concept, we used sensing …
external bias for ultrasensitive strain sensing. As a proof of concept, we used sensing …