Recent advancements in wearable electronics offer seamless integration with the human
body for extracting various biophysical and biochemical information for real-time health …

Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling
limits place extreme demands on the properties of all materials involved. The requirements …

In narrow electron bands in which the Coulomb interaction energy becomes comparable to
the bandwidth, interactions can drive new quantum phases. Such flat bands in twisted …

Digital logic circuits are based on complementary pairs of n-and p-type field effect transistors
(FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) …

As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Two-dimensional semiconductors, such as transition metal dichalcogenides, have
demonstrated tremendous promise for the development of highly tunable quantum devices …

High Schottky barrier heights at metal–semiconductor junctions due to Fermi-level pinning
can degrade the performance of electronic devices and increase their energy consumption …

Near the boundary between ordered and disordered quantum phases, several experiments
have demonstrated metallic behaviour that defies the Landau Fermi paradigm,,,–. In moiré …

Polymorphic 2D materials allow structural and electronic phase engineering, which can be
used to realize energy-efficient, cost-effective, and scalable device applications. The phase …

Interest in new thermal diodes, regulators, and switches has been rapidly growing because
these components have the potential for rich transport phenomena that cannot be achieved …