Two-dimensional (2D) materials are characterised by their strong intraplanar bonding but
weak interplanar interaction. Interfaces between neighboring 2D layers or between 2D …

We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that
produces wafer-scale, single-orientation graphene on an insulating substrate. It is often …

Carbon dots (CDs) with a high quantum yield have been synthesized by a facile and green
one-pot approach under microwaves with silkworm chrysalis (SC) as the natural carbon …

Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that
would enable unique applications. Integration of graphene with inorganic semiconductors …

The intercalation of graphene with suitable atomic species is one of the most frequently
applied methods to decouple the graphene layer from the substrate in order to establish the …

We directly correlate the local (20 nm scale) and global electronic properties of a device
containing mono-, bi-and tri-layer epitaxial graphene (EG) domains on 6H–SiC (0001) by …

Intercalation is a promising approach for tailoring the electronic structure of epitaxial
graphene on SiC. It enables the formation of otherwise unstable 2D phases of elements and …

Heterostructures consisting of two-dimensional materials have shown new physical
phenomena, novel electronic and optical properties and new device concepts not observed …

Sulfur intercalation of a carbon rich (6 3× 6 3) R 30∘ (63*63)R30\,^∘ reconstruction on
silicon carbide, also known as buffer layer, is reported. In a two‐zone furnace a sulfur rich …