Evolution of total ionizing dose effects in MOS devices with Moore's law scaling
DM Fleetwood - IEEE Transactions on Nuclear Science, 2017 - ieeexplore.ieee.org
The general reduction in the thicknesses of critical dielectric layers driven by Moore's law
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …
An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …
challenges for electronic system designers and nuclear power plant personnel, in particular …
Radiation effects in advanced and emerging nonvolatile memories
MJ Marinella - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical
direction and dominate the commercial nonvolatile memory market. However, several …
direction and dominate the commercial nonvolatile memory market. However, several …
Ionizing Radiation Effectsin Electronics
M Bagatin, S Gerardin - 2016 - api.taylorfrancis.com
There is an invisible enemy that constantly threatens the operation of electronics: ionizing
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …
[BOOK][B] Soft Errors: from particles to circuits
JL Autran, D Munteanu - 2017 - books.google.com
Soft errors are a multifaceted issue at the crossroads of applied physics and engineering
sciences. Soft errors are by nature multiscale and multiphysics problems that combine not …
sciences. Soft errors are by nature multiscale and multiphysics problems that combine not …
Challenges in testing complex systems
H Quinn - IEEE Transactions on Nuclear Science, 2014 - ieeexplore.ieee.org
Many space programs depend on cutting-edge technology to increase computational power
without increasing the power or weight of the payload. For these types of programs …
without increasing the power or weight of the payload. For these types of programs …
Nanofocused X-ray beam to reprogram secure circuits
Synchrotron-based X-ray nanobeams are investigated as a tool to perturb microcontroller
circuits. An intense hard X-ray focused beam of a few tens of nanometers is used to target …
circuits. An intense hard X-ray focused beam of a few tens of nanometers is used to target …
Hf0. 5Zr0. 5O₂-based ferroelectric field-effect transistors with HfO₂ seed layers for radiation-hard nonvolatile memory applications
C Liu, W **ao, Y Peng, B Zeng, S Zheng… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with HfO 2 seed
layer were investigated for radiation-hard nonvolatile memory applications. First, it was …
layer were investigated for radiation-hard nonvolatile memory applications. First, it was …
Advanced terahertz techniques for quality control and counterfeit detection
This paper reports our invented methods for detection of counterfeit electronic. These
versatile techniques are also handy in quality control applications. Terahertz pulsed laser …
versatile techniques are also handy in quality control applications. Terahertz pulsed laser …
Total ionizing dose effects in 3-D NAND flash memories
The effects of total ionizing dose on 3-D flash memories irradiated with gamma rays are
investigated. The evolution and shape of threshold voltage distributions are studied versus …
investigated. The evolution and shape of threshold voltage distributions are studied versus …