Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …

The third quadrant (3rd-quad) conduction of power MOSFETs involves competing current
sharing between the metal-oxide-semiconductor (MOS) channel and the body diode …

A novel SiC double-trench MOSFET (DT-MOS) with embedded MOS-channel diode is
proposed and investigated via TCAD simulations in this article. The parasitic body diode is …

A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with
improved third quadrant and switching performance is proposed and characterized in this …

In this article, a recessed source trench silicon carbide (SiC) MOSFET with integrated MOS-
channel diode (MCD) is proposed and investigated by TCAD simulations. The MCD features …

A novel silicon carbide (SiC) asymmetric trench MOSFET with integrated low-loss diode
(LLD-ATMOS) is proposed and investigated by numerical simulations to reduce switching …

A new silicon power MOSFET architecture is proposed by introducing a built-in channel
diode through a dummy MOS gate electrically coupled to the source. The oxide thickness of …

In this letter, the authors demonstrated superior electrical characteristics of a 1.2 kV SiC
Schottky barrier diode-wall integrated trench MOSFET (SWITCH-MOS) with the higher …

In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCD-
MOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a …