In the quest to expand the functionality and capacity of group IV semiconductor photonic
systems, new materials and production methods are constantly being explored. In particular …

The behavior of strain relaxation and Sn segregation of GeSn epilayers during growth and
thermal annealing is very complex depending on the growth method, thickness and Sn …

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur
passivation on gate stack quality | Journal of Applied Physics | AIP Publishing Skip to Main …

The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings
new challenges related to the metastability of this class of materials. As a matter of fact …

The technology to develop a large number of identical coherent light sources on an
integrated photonics platform holds the key to the realization of scalable optical and …

Interactions between nanosecond laser pulses and various Sn content pseudomorphic
GeSn layers were investigated. The aim was to evaluate the suitability of Ultraviolet …

We investigated the effect of millisecond (ms) laser annealing and do** concentration on
the chemical bonding states and dopant behaviors of P-doped epitaxial Si (Si: P) layers …

Although the Sn content in GeSn can reach 10% using chemical vapor deposition, the
reduction of Sn content by in-situ boron do** and solid phase do** by chemical vapor …

High-pressure, pulsed discharge-pumped XeCl excimer lasers are operating in the
ultraviolet range at a wavelength of 308 nm. In this paper, a one-dimensional fluid model …

Single crystalline germanium-lead (GePb) is formed using pulsed laser anneal (PLA). The
anneal was performed on an amorphous GePb layer (1.1 atomic percent of Pb) capped by …