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Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson… - US Patent …, 2001 - Google Patents
An underlying gallium nitride layer on a Silicon carbide Substrate is masked with a mask that
includes an array of openings therein, and the underlying gallium nitride layer is etched …
includes an array of openings therein, and the underlying gallium nitride layer is etched …
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
6,051,849 A 4/2000 Davis et al. 6,153,010 A 11/2000 Kiyoku et al. 6,156,581 A 12/2000
Vaudo et al. 6,177,057 B1 1/2001 Purdy 6,177.292 B1 1/2001 Hong et al. 6,180,270 B1 …
Vaudo et al. 6,177,057 B1 1/2001 Purdy 6,177.292 B1 1/2001 Hong et al. 6,180,270 B1 …
High power LED
TJ Barnett, SP Tillinghast - US Patent 6,541,800, 2003 - Google Patents
US6541800B2 - High power LED - Google Patents US6541800B2 - High power LED -
Google Patents High power LED Download PDF Info Publication number US6541800B2 …
Google Patents High power LED Download PDF Info Publication number US6541800B2 …
Gallium nitride materials and methods
TW Weeks Jr, EL Piner, T Gehrke… - US Patent …, 2003 - Google Patents
US6617060B2 - Gallium nitride materials and methods - Google Patents US6617060B2 -
Gallium nitride materials and methods - Google Patents Gallium nitride materials and methods …
Gallium nitride materials and methods - Google Patents Gallium nitride materials and methods …
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
M Koike, Y Tezen, T Hiramatsu, S Nagai - US Patent 7,491,984, 2009 - Google Patents
US7491984B2 - Method for fabricating group III nitride compound semiconductors and
group III nitride compound semiconductor devices - Google Patents US7491984B2 …
group III nitride compound semiconductor devices - Google Patents US7491984B2 …
Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
BA Haskell, MB McLaurin, SP DenBaars… - US Patent …, 2011 - Google Patents
(57) ABSTRACT A method of growing highly planar, fully transparent and specular m-plane
gallium nitride (GaN) films. The method provides for a significant reduction in structural …
gallium nitride (GaN) films. The method provides for a significant reduction in structural …
Gallium nitride materials and methods
TW Weeks Jr, EL Piner, T Gehrke… - US Patent …, 2003 - Google Patents
US PATENT DOCUMENTS Semiconductor materials include a transition layer formed
5,192,987 A 3/1993 Khan et al. between the silicon Substrate and the gallium nitride …
5,192,987 A 3/1993 Khan et al. between the silicon Substrate and the gallium nitride …
Gallium nitride material devices and methods including backside vias
TW Weeks, EL Piner, RM Borges… - US Patent …, 2003 - Google Patents
The invention includes providing gallium nitride material devices having backside vias and
methods to form the devices. The devices include a gallium nitride material formed over a …
methods to form the devices. The devices include a gallium nitride material formed over a …
Binary group III-nitride based high electron mobility transistors
AW Saxler - US Patent 7,544,963, 2009 - Google Patents
Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating
binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III …
binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III …
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
(54) GALLIUM NITRIDE MATERIAL DEVICES 5,296,395 A 3, 1994 Khan et al. INCLUDING
AN ELECTRODE-DEFINING 5,389,571 A 2f1995 Takeuchi et al. LAYER AND METHODS …
AN ELECTRODE-DEFINING 5,389,571 A 2f1995 Takeuchi et al. LAYER AND METHODS …