Aluminum nitride (AlN), distinguished by exceptional mechanical, optical, and electronic
properties, has found extensive applications in diverse domains, including heat dissipation …

We report the demonstration of growing two-dimensional (2D) hexagonal-AlN (h-AlN) on
transition metal dichalcogenide (TMD) monolayers (MoS 2, WS 2, and WSe 2) via van der …

We report a procedure for fabricating superhydrophobic carbides with femtosecond laser-
assisted carburization of metals, semiconductors, and oxides from waste plastics. To form a …

Simultaneously inducing preferred crystalline orientation with a strong piezoelectric
response in polycrystalline aluminum nitride (AlN) thin films by atomic layer deposition is a …

With the progress of wide bandgap semiconductors, compact solid-state light-emitting
devices for the ultraviolet wavelength region are of considerable technological interest as …

Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the
temperature range of 175–350° C. The thin films were deposited using trimethyl aluminum …

Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN)
thin films on Si (100), Si (111), and c-plane sapphire substrates at 250° C …

The aim of this study is motivated by the pursuit to investigate the performance of new and
as yet untested precursors such as hydrazinium chloride (N2H5Cl) and triisobutylaluminum …

The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a
baking and plasma pretreatment of the substrate prior to the GaN plasma-enhanced atomic …

Conventional annealing techniques face tremendous challenges in nanoscale fabrication.
For example, the heating depth of conventional annealing techniques is much greater than …