Silicon-carbide (SiC) is a promising platform for long-distance quantum information
transmission via single photons, offering long spin coherence qubits, excellent electronic …

Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable
platforms for various quantum technologies. However, the low photon count rate significantly …

Divacancy (V Si VC) centers in silicon carbide (SiC) have potential applications in quantum
communication and sensing due to their attractive optical and spin properties. To realize …

The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon
carbide (SiC) are two of the most prominent candidates for functioning as room-temperature …

Silicon carbide (SiC) has attracted significant attention as a promising quantum material due
to its ability to host long-lived, optically addressable color centers with solid-state photonic …

The color centers in diamond and silicon carbide have been extensively investigated due to
interest in them as quantum light sources. Their excellent optical and spin characteristics are …

The improvement of crystal quality in recent years thanks to the advanced fabrication
technology development of silicon carbide (SiC) in power electronics, enables the control of …