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Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
New approaches for calculating absolute surface energies of wurtzite (0001)/(0001): A study of ZnO and GaN
The accurate absolute surface energies of (0001)/(000 1) surfaces of wurtzite structures
are crucial in determining the thin film growth mode of important energy materials. However …
are crucial in determining the thin film growth mode of important energy materials. However …
Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates
Sapphire and SiC are typical substrates used for GaN growth. However, they are non-native
substrates and result in highly defective materials. The use of ZnO substrates can result in …
substrates and result in highly defective materials. The use of ZnO substrates can result in …
Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate
Heterostructures of wurtzite based devices have attracted great research interest because of
the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN …
the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN …
III-nitrides on oxygen-and zinc-face ZnO substrates
The characteristics of III-nitrides grown on zinc-and oxygen-face ZnO by plasma-assisted
molecular beam epitaxy were investigated. The reflection high-energy electron diffraction …
molecular beam epitaxy were investigated. The reflection high-energy electron diffraction …
Growth of GaN on ZnO for solid state lighting applications
N Li, EH Park, Y Huang, S Wang… - … on Solid State …, 2006 - spiedigitallibrary.org
In this work, ZnO has been investigated as a substrate technology for GaN-based devices
due to its close lattice match, stacking order match, and similar thermal expansion …
due to its close lattice match, stacking order match, and similar thermal expansion …
Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates
InGaN layers have been grown on (0001) ZnO substrates by metalorganic chemical vapor
deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with …
deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with …
X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam …
K Meyer, M Buchholz, D Uxa, L Dörrer… - Materials Science in …, 2020 - Elsevier
Gallium nitride (GaN) growth on two different crystallographic orientations of magnesium
fluoride (MgF 2) by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated by …
fluoride (MgF 2) by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated by …
Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si (111)
L Tarnawska, P Zaumseil, MA Schubert… - Journal of Applied …, 2012 - pubs.aip.org
Thick (∼ 900 nm) GaN layers were grown by molecular beam epitaxy on cost-effective Sc 2
O 3/Y 2 O 3/Si (111) substrates and characterized by x-ray diffraction and …
O 3/Y 2 O 3/Si (111) substrates and characterized by x-ray diffraction and …
Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films
S Xue, X Zhang, R Huang, H Zhuang - Applied surface science, 2008 - Elsevier
ZnO thin films with different thickness (the sputtering time of ZnO buffer layers was 10min,
15min, 20min, and 25min, respectively) were first prepared on Si substrates using radio …
15min, 20min, and 25min, respectively) were first prepared on Si substrates using radio …