The performance of the ICIP Ga-free superlattice longwave infrared photodetector for high operating temperature

W Gawron, Ł Kubiszyn, K Michalczewski… - Infrared Physics & …, 2023 - Elsevier
This paper presents the performance of an interband cascade long wavelength infrared
detector designed for high operating temperature (≥ 196 K). The device was based on the …

[HTML][HTML] Electrical gain in interband cascade infrared photodetectors

W Huang, L Li, L Lei, JA Massengale… - Journal of Applied …, 2018 - pubs.aip.org
In order to achieve improved understanding and gain insights into the device operation of
interband cascade infrared photodetectors (ICIPs) and ultimately to optimize the design, we …

Narrow bandgap photovoltaic cells

RQ Yang, W Huang, MB Santos - Solar Energy Materials and Solar Cells, 2022 - Elsevier
Research activities and progress in narrow bandgap (< 0.5 eV) photovoltaic (PV) cells for
applications in thermophotovoltaic (TPV) systems are reviewed and discussed. The device …

Midwavelength interband cascade infrared photodetectors with superlattice absorbers and gain

L Lei, L Li, H Lotfi, H Ye, RQ Yang… - Optical …, 2018 - spiedigitallibrary.org
We report on a comparison study of the electrical and optical properties of a set of device
structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber …

[HTML][HTML] Current-matching versus non-current-matching in long wavelength interband cascade infrared photodetectors

W Huang, L Lei, L Li, JA Massengale… - Journal of Applied …, 2017 - pubs.aip.org
We report on a comparative study of two sets of different long-wavelength (LW) interband
cascade infrared photodetectors (ICIPs) based on a type-II InAs/GaSb superlattice. The …

Multi-stage infrared detectors

Z Shen, Z Yang, Z Dai, B Chen - Semiconductor Science and …, 2025 - iopscience.iop.org
This paper provides a comprehensive review of multi-stage infrared detectors, including
interband cascade infrared photodetectors (ICIPs) and quantum cascade detectors (QCDs) …

[HTML][HTML] Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells

ED Guarin Castro, F Rothmayr, S Krüger, G Knebl… - AIP Advances, 2020 - pubs.aip.org
We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb
double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by …

[HTML][HTML] Limiting factors and efficiencies of narrow bandgap single-absorber and multi-stage interband cascade thermophotovoltaic cells under monochromatic light …

W Huang, RQ Yang - Journal of Applied Physics, 2019 - pubs.aip.org
In this work, the factors that limit the conversion efficiency of narrow bandgap
thermophotovoltaic (TPV) cells are identified and their impact on device performance is …

Metamorphic integration of GaInAsSb material on GaAs substrates for light emitting device applications

Q Lu, A Marshall, A Krier - Materials, 2019 - mdpi.com
The GaInAsSb material has been conventionally grown on lattice-matched GaSb substrates.
In this work, we transplanted this material onto the GaAs substrates in molecular beam …

Photothermal deflection technique investigation of thermal annealing effects of AlGaAsSb/GaSb laser structure: Non-radiative recombination parameters …

S Ilahi, N Yacoubi, F Genty - Materials Research Bulletin, 2018 - Elsevier
Photothermal deflection technique (PTD) is used to investigate the effects of thermal
annealing time on nonradiative recombination parameters ie nonradiative lifetime of minority …