[HTML][HTML] Terahertz metadevices for silicon plasmonics

Y Liang, H Yu, H Wang, HC Zhang, TJ Cui - Chip, 2022 - Elsevier
Metamaterial devices (metadevices) have been developed in progress aiming to generate
extraordinary performance over traditional devices in the (sub-) terahertz (THz) domain, and …

A 124-to-152-GHz power amplifier exploiting Chebyshev-type two-section wideband and low-loss power-combining technique in 28-nm CMOS

J Zhang, Y Wang, Y Chen, J Ren… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article presents a high-power wideband power amplifier (PA) with a four-way power-
combining technique for-band high-resolution radar. The power combiner is based on a two …

Frequency reconfigurable mm-wave power amplifier with active impedance synthesis in an asymmetrical non-isolated combiner: Analysis and design

CR Chappidi, K Sengupta - IEEE Journal of Solid-State Circuits, 2017 - ieeexplore.ieee.org
A frequency reconfigurable millimeter-wave (mm-wave) power amplifier (PA), which can be
programmed to operate efficiently for a wide swathe of the spectrum, approaching an …

A 40–67 GHz Power Amplifier With 13 dBm and 16% PAE in 28 nm CMOS LP

M Bassi, J Zhao, A Bevilacqua… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Pushed by the availability of large fractional bandwidths, many well-established applications
are focusing mm-wave spectrum for product deployment. Generation of broadband power at …

Globally optimal matching networks with lossy passives and efficiency bounds

CR Chappidi, K Sengupta - … on Circuits and Systems I: Regular …, 2017 - ieeexplore.ieee.org
Impedance transformation is one of the central concepts in high-frequency circuits and
systems and is used ubiquitously for optimal power matching, noise matching, and high …

A 239–281 GHz CMOS receiver with on-chip circular-polarized substrate integrated waveguide antenna for sub-terahertz imaging

Y Shang, H Yu, H Fu, WM Lim - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
A 239–281 GHz sub-THz imager with circular-polarize d substrate-integrated-waveguide
(SIW) antenna is demonstrated in CMOS 65 nm process with high spectrum resolution and …

Design and analysis of wide frequency-tuning-range CMOS 60 GHz VCO by switching inductor loaded transformer

W Fei, H Yu, H Fu, J Ren, KS Yeo - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
<? Pub Dtl=""?> To provide wide frequency tuning range (FTR) with compact implementation
area, a new inductive tuning method is introduced in this paper for CMOS 60 GHz voltage …

A compact 57–67 GHz bidirectional LNAPA in 65-nm CMOS technology

F Meng, K Ma, KS Yeo, CC Boon, X Yi… - IEEE Microwave and …, 2016 - ieeexplore.ieee.org
The letter reports a 57-67 GHz bidirectional low-noise amplifier power amplifier (LNAPA)
design. To eliminate the use of T/R switches, the bidirectional matching networks are …

A V-Band Power Amplifier With Integrated Wilkinson Power Dividers-Combiners and Transformers in 0.18- m SiGe BiCMOS

K Kim, C Nguyen - IEEE Transactions on Circuits and Systems …, 2018 - ieeexplore.ieee.org
A high output power fully integrated V-band power amplifier (PA) is developed using a 0.18-
μm SiGe BiCMOS technology. The developed PA makes use of four-way parallel power …

High-Sensitivity CMOS Super-Regenerative Receiver with Quench-Controlled High- Metamaterial Resonator for Millimeter-Wave Imaging at 96 and 135 GHz

Y Shang, H Yu, S Hu, Y Liang, X Bi… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
High-sensitivity super-regenerative receivers (SRXs) are demonstrated at 96 and 135 GHz,
respectively, in this paper. They are based on high-Q quench-controlled metamaterial …