GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

This paper reviews the physical mechanisms responsible for breakdown current in
AlGaN/GaN high electron mobility transistors (HEMTs). Through a critical comparison …

Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …

Power GaN transistors have recently demonstrated to be excellent devices for application in
power electronics. The high breakdown field and the superior mobility of the 2-dimensional …

Degradation mechanisms limiting the electrical reliability of GaN high-electron-mobility
transistors (HEMTs) are generally attributed to defect generation by hot-electrons but …

The semiconducting behaviour and optoelectronic response of gallium nitride is governed
by point defect processes, which, despite many years of research, remain poorly …

The hot-electron-related reliability is an important issue for GaN power devices under harsh
operation condition or environment. These high-energy electrons can scatter toward the …

Gate and drain bias dependences of hot carrier degradation are evaluated for AlGaN/GaN
HEMTs fabricated via two different process methods. Both positive and negative threshold …

Space-charge-limited currents are important in energy devices such as solar cells and light-
emitting diodes, but the available theory from the 1950s finds it necessary to postulate defect …

Current–voltage characteristics and low-frequency (LF) noise of industrial-quality
AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a …