In the past decade graphene has been one of the most studied materials for several unique
and excellent properties. Due to its two dimensional nature, physical and chemical …

The extremely high carrier mobility and the unique band structure, make graphene very
useful for field-effect transistor applications. According to several works, the primary …

We investigate the origin of the hysteresis observed in the transfer characteristics of back-
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …

Graphene, because of its excellent mechanical, electrical, chemical, physical properties,
sparked great interest to develop and extend its applications. Particularly, graphene based …

We study electrical transport properties in exfoliated molybdenum disulfide (MoS 2) back-
gated field effect transistors at low drain bias and under different illumination intensities. It is …

Few‐layer palladium diselenide (PdSe2) field effect transistors are studied under external
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-
concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips …

Lateral and vertical two-dimensional heterostructure devices, in particular graphene–MoS2,
have attracted profound interest as they offer additional functionalities over normal two …

We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in
parallel with a Gr/SiO 2/Si capacitor for high-performance photodetection. The device …

The metal-graphene contact resistance is one of the major limiting factors toward the
technological exploitation of graphene in electronic devices and sensors. High contact …