Passivating contacts for crystalline silicon solar cells: an overview of the current advances and future perspectives

W Li, Z Xu, Y Yan, J Zhou, Q Huang… - Advanced Energy …, 2024‏ - Wiley Online Library
Solar photovoltaics (PV) are poised to be crucial in limiting global warming by replacing
traditional fossil fuel generation. Within the PV community, crystalline silicon (c‐Si) solar …

Progress and future prospects of wide‐bandgap metal‐compound‐based passivating contacts for silicon solar cells

K Gao, Q Bi, X Wang, W Liu, C ** wide‐bandgap metal compound‐based
passivating contacts as alternatives to conventional doped‐silicon‐layer‐based passivating …

Outstanding Surface Passivation for Highly Efficient Silicon Solar Cells Enabled by Innovative Al y TiO x /TiO x Electron‐Selective Contact Stack

MM Shehata, P Phang, R Basnet, Y Yin, F Kremer… - Solar …, 2022‏ - Wiley Online Library
Passivating contacts based on transition metal oxides (TMOs) have the potential to
overcome existing performance limitations in high‐efficiency crystalline silicon (c‐Si) solar …

Low-temperature Ta-doped TiOx electron-selective contacts for high-performance silicon solar cells

L Zhang, J Qiu, H Cheng, Y Zhang, S Zhong… - Solar Energy Materials …, 2024‏ - Elsevier
Carrier-selective contacts have been widely used to reduce the recombination losses of the
minority carriers and boost the transport of the majority carriers at the contact regions for …

21.16%-efficiency p-type TOPCon solar cell with ALD-Al2O3/MoOx/Ag as a hole-selective passivating contact

H Cheng, Z Huang, L Zhang, Y Liu, X Song, R Tong… - Solar Energy, 2022‏ - Elsevier
High-performance hole-selective passivating contact is of significance in obtaining the high
efficiency of a full-area carriers-selective contact-based solar cell. In this work, we prepared …

Pinhole-like carriers transport in spin-coating SiO2 enabling high-efficiency dopant-free Si solar cells

J Qiu, Z Zhou, L Zhang, X Song, S Zhong, H Yin… - Chemical Engineering …, 2024‏ - Elsevier
The wide bandgap oxide is considered a promising passivating contact for Si solar cells due
to its low parasitic absorption and low-temperature process. However, the power conversion …

Optimization of a Solution-Processed TiOx/(n)c-Si Electron-Selective Interface by Pre- and Postdeposition Treatments

N Beyraghi, MC Sahiner, O Oguz… - ACS Applied Materials & …, 2024‏ - ACS Publications
Develo** a vacuum-free and low-temperature deposition technique for dopant-free carrier-
selective materials without sacrificing their performance can reduce the fabrication cost and …