Laser based display method and system
JW Raring, P Rudy - US Patent 8,427,590, 2013 - Google Patents
The present invention is directed to display technologies. More specifically, various
embodiments of the present invention provide projection display systems where one or more …
embodiments of the present invention provide projection display systems where one or more …
Solid-state optical device having enhanced indium content in active regions
JW Raring, DF Feezell, S Nakamura - US Patent 8,847,249, 2014 - Google Patents
US8847249B2 - Solid-state optical device having enhanced indium content in active regions -
Google Patents US8847249B2 - Solid-state optical device having enhanced indium content in …
Google Patents US8847249B2 - Solid-state optical device having enhanced indium content in …
Method and surface morphology of non-polar gallium nitride containing substrates
J Raring, C Poblenz - US Patent 8,247,887, 2012 - Google Patents
An optical device, eg, LED, laser. The device includes a non-polar gallium nitride substrate
member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific …
member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific …
Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
JW Raring, N Pfister, M Schmidt, C Poblenz - US Patent 8,355,418, 2013 - Google Patents
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5/2011 Kyono et al. 7968.864 B2 6, 2011 Akita et al. 2009/0081867 A1 3, 2009 Taguchi et …
Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates
JW Raring, N Pfister, M Schmidt, C Poblenz - US Patent 8,351,478, 2013 - Google Patents
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Optical device structure using GaN substrates for laser applications
An optical device includes a gallium nitride substrate member having an m-plane nonpolar
crystalline surface region characterized by an orientation of about− 2 degrees to about 2 …
crystalline surface region characterized by an orientation of about− 2 degrees to about 2 …
Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
JW Raring, M Schmidt, C Poblenz - US Patent 9,543,738, 2017 - Google Patents
US9543738B2 - Low voltage laser diodes on {20-21} gallium and nitrogen containing
substrates - Google Patents US9543738B2 - Low voltage laser diodes on {20-21} gallium and …
substrates - Google Patents US9543738B2 - Low voltage laser diodes on {20-21} gallium and …
Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
JW Raring, DF Feezell - US Patent 8,259,769, 2012 - Google Patents
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Optical device structure using GaN substrates and growth structures for laser applications
JW Raring - US Patent 8,254,425, 2012 - Google Patents
US8254425B1 - Optical device structure using GaN substrates and growth structures for laser
applications - Google Patents US8254425B1 - Optical device structure using GaN substrates …
applications - Google Patents US8254425B1 - Optical device structure using GaN substrates …
Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
JW Raring - US Patent 8,242,522, 2012 - Google Patents
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