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Basics of plasma spectroscopy
U Fantz - Plasma sources science and technology, 2006 - iopscience.iop.org
These lecture notes are intended to give an introductory course on plasma spectroscopy.
Focusing on emission spectroscopy, the underlying principles of atomic and molecular …
Focusing on emission spectroscopy, the underlying principles of atomic and molecular …
6. Molecular spectroscopy techniques applied for processing plasma diagnostics
N Sadeghi - プラズマ・核融合学会誌, 2004 - jlc.jst.go.jp
Optical diagnostics are between the most commonly used tools for the characterization of
plasmas and for the better understanding of physical and chemical processes controlling …
plasmas and for the better understanding of physical and chemical processes controlling …
production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization
The study of CF and CF 2 radical production and loss mechanisms in capacitively-coupled
13.56 MHz CF 4 plasmas has been extended to CF 4 plasmas with an Si substrate, and to C …
13.56 MHz CF 4 plasmas has been extended to CF 4 plasmas with an Si substrate, and to C …
Modeling the plasma chemistry of and etching of silicon dioxide, with comparisons to etch rate and diagnostic data
P Ho, JE Johannes, RJ Buss, E Meeks - Journal of Vacuum Science & …, 2001 - pubs.aip.org
A detailed chemical reaction mechanism is reported that describes the C 2 F 6 and CHF 3
plasma etching of silicon dioxide, which is widely used in the fabrication of microelectronic …
plasma etching of silicon dioxide, which is widely used in the fabrication of microelectronic …
radical production and loss in a reactive ion etching plasma: Fluorine rich conditions
Space and time resolved laser induced fluorescence, combined with absolute calibration
techniques, were used to probe the production and loss mechanisms of CF and CF 2 …
techniques, were used to probe the production and loss mechanisms of CF and CF 2 …
Plasma diagnostics for unraveling process chemistry
JM Stillahn, KJ Trevino, ER Fisher - Annu. Rev. Anal. Chem., 2008 - annualreviews.org
This review focuses on the use of diagnostic tools to examine plasma processing chemistry,
primarily plasma species energetics, dynamics, and molecule-surface reactions. We …
primarily plasma species energetics, dynamics, and molecule-surface reactions. We …
[HTML][HTML] Reactions of fluorine atoms with silicon, revisited, again
Chemical etching of silicon by fluorine atoms in the absence of ion bombardment is
reviewed. Controversies on the identity of etching products and reaction probabilities are …
reviewed. Controversies on the identity of etching products and reaction probabilities are …
Multifold study of volume plasma chemistry in Ar/CF4 and Ar/CHF3 CCP discharges
Low-pressure RF plasma in fluorohydrocarbon gas mixtures is widely used in modern
microelectronics, eg in the etching of materials with a low dielectric constant (low-k) …
microelectronics, eg in the etching of materials with a low dielectric constant (low-k) …
Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms
The etch rate of 4H–SiC in a SF 6 helicon plasma has been investigated as a function of
pressure, rf power, bias voltage and distance between the substrate holder and the helicon …
pressure, rf power, bias voltage and distance between the substrate holder and the helicon …
Gas temperature measurement in CF4, SF6, O2, Cl2, and HBr inductively coupled plasmas
Neutral gas temperature (T g) is measured in an industrial high-density inductively coupled
etch reactor operating in CF 4, SF 6, O 2, Cl 2, or HBr plasmas. Two laser diodes are …
etch reactor operating in CF 4, SF 6, O 2, Cl 2, or HBr plasmas. Two laser diodes are …