Basal-plane stacking faults are an important class of optically active structural defects in
wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a …

In the last decade, the development of ultrafast electron diffraction (UED) and microscopy
(UEM) have enabled the imaging of atomic motion in real time and space. These pivotal …

Progress has been made in the development of four-dimensional ultrafast electron
microscopy, which enables space-time imaging of structural dynamics in the condensed …

The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-
Ga 2 O 3 vertical Schottky rectifiers was observed for fluences up to 1.43× 10 16 cm− 2. The …

Cathodoluminescence (CL) spectroscopy provides a powerful way to characterize optical
properties of materials with deep-subwavelength spatial resolution. While CL imaging to …

Ultrafast transmission electron microscopy (UTEM) combines sub-picosecond time-
resolution with the versatility of TEM spectroscopies. It allows us to study the ultrafast …

The dependence of excited electron–hole state properties on the size of their host
semiconducting nanostructures is the seed for a plethora of applications such as light …

We report an unusual temperature dependence of exciton lifetimes in arrays of GaN
nanostructures grown on semipolar (11-22) oriented Al 0.5 Ga 0.5 N alloy by molecular …

Reduced‐dimensionality materials for photonic and optoelectronic applications including
energy conversion, solid‐state lighting, sensing, and information technology are undergoing …

Combined cathodoluminescence (CL) and photoluminescence (PL) studies in time resolved
regime were used to characterize recombination properties of the semiconductor material …