Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
Optics in computing: From photonic network-on-chip to chip-to-chip interconnects and disintegrated architectures
Following a decade of radical advances in the areas of integrated photonics and computing
architectures, we discuss the use of optics in the current computing landscape attempting to …
architectures, we discuss the use of optics in the current computing landscape attempting to …
Opportunities for integrated photonic neural networks
Photonics offers exciting opportunities for neuromorphic computing. This paper specifically
reviews the prospects of integrated optical solutions for accelerating inference and training …
reviews the prospects of integrated optical solutions for accelerating inference and training …
GeSnOI mid-infrared laser technology
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers
manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap …
manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap …
Design, theoretical, and experimental investigation of tensile-strained germanium quantum-well laser structure
Strain and band gap engineered epitaxial germanium (ε-Ge) quantum-well (QW) laser
structures were investigated on GaAs substrates theoretically and experimentally for the first …
structures were investigated on GaAs substrates theoretically and experimentally for the first …
High-speed CMOS-compatible III-V on Si membrane photodetectors
The monolithic integration of power-efficient optoelectronic devices with CMOS circuits is
critical for future on-chip optical communication. In such platforms, ultra-high-speed …
critical for future on-chip optical communication. In such platforms, ultra-high-speed …
High carrier lifetimes in epitaxial germanium–tin/Al (In) As heterostructures with variable tin compositions
Group IV-based germanium–tin (Ge1− ySny) compositional materials have recently shown
great promise for infrared detection, light emission and ultra-low power transistors. High …
great promise for infrared detection, light emission and ultra-low power transistors. High …
3D integrated laser attach technology on a 300-mm monolithic CMOS silicon photonics platform
Y Bian, K Ramachandran, ZJ Wu… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
Enabling cost-effective and power-efficient laser source on a silicon photonics (SiPh)
platform is a major goal that has been highly sought after. In the past two decades …
platform is a major goal that has been highly sought after. In the past two decades …
[HTML][HTML] THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
We report electroluminescence originating from L-valley transitions in n-type Ge/Si 0.15 Ge
0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ …
0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ …
Design of Si-rich nitride interposer waveguides for efficient light coupling from InP-based QD-emitters to Si3N4 waveguides on a silicon substrate
D Chatzitheocharis, D Ketzaki, C Calò, C Caillaud… - Optics …, 2020 - opg.optica.org
In this paper, we present a systematic analysis for the design of Si-rich-nitride (SRN) based
interposer waveguide layers interfacing InP-based devices and Si_3N_4 waveguides …
interposer waveguide layers interfacing InP-based devices and Si_3N_4 waveguides …