Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW)
operation have been a long sought-after component for photonic integrated circuits (PICs) …

Nanotechnology is an emerging field of science devoted to provide new opportunities in a
vast range of areas. In this paper, different techniques are proposed to enable the long …

A quantum dot (QD) mode-locked laser as an active comb generator takes advantage of its
small footprint, low power consumption, large optical bandwidth, and high-temperature …

III-V semiconductors monolithically grown on Si substrates are expected to be an ideal
solution to integrate highly efficient light-emitting devices on a Si platform. However, the …

InAs/GaAs quantum dot (QD) laser monolithically grown on silicon is one of the potential
approaches to realizing silicon-based light sources. However, the mismatch between GaAs …

Monolithic integration of III-V laser sources on standard silicon-on-insulator (SOI) substrate
has been recognized as an enabling technology for realizing Si-based photonic integration …

Compound-semiconductor-based lasers grown directly on silicon substrates would
constitute an important technology for the realization of on-chip optical interconnects. The …