Strongly correlated nickelate: Recent progress of synthesis and applications in artificial intelligence

Z Zhang, Y Yu, X Qiao, J Sun, Y Ni, J Chen - Materials Science in …, 2023 - Elsevier
Perovskite nickelates (ReNiO 3) belong to the family of strongly correlated materials, the
electrical properties of which are extremely sensitive to external stimuli. Nevertheless …

A SmNiO 3 memristor with artificial synapse function properties and the implementation of Boolean logic circuits

L Li, D Yu, Y Wei, Y Sun, J Zhao, Z Zhou, J Yang… - Nanoscale, 2023 - pubs.rsc.org
Recently, with the improvement of the requirements for fast and efficient data processing in
the era of artificial intelligence, new forms of computing have come into being. Develo** …

High‐Performance GdNiO3 Epitaxial Film Memristor for Neuralactivity Analysis

B Bai, G Liu, Y Sun, P Liu, Z Zhao… - Advanced Functional …, 2024 - Wiley Online Library
Perovskite‐type rare earth nickelates based memristor have recently attracted extensive
attention in the field of novel storage computing due to their special electronic structure and …

Electrode effect regulated resistance switching and selector characteristics in Nb doped SrTiO3 single crystal for potential cross-point memory applications

TF Zhang, XG Tang, QX Liu, YP Jiang - Journal of Alloys and Compounds, 2018 - Elsevier
Current-voltage characteristics of Nb doped SrTiO 3 single crystals are detected at room
temperatures. Results reveal that modifications of electrode configurations play a significant …

Temperature-sensing array using the metal-to-insulator transition of NdxSm1−xNiO3

F Yan, Z Li, H Zhang, Y Cui, K Nie, N Chen… - International Journal of …, 2024 - Springer
Abstract Rare-earth nickelates (RENiO3) show widely tunable metal-to-insulator transition
(MIT) properties with ignorable variations in lattice constants and small latent heat across the …

Cell Size Effects and Distinct Current Conduction Behaviors for Hafnium‐Oxide‐Based Selectors with Vanadium as Top Electrode

PH Chen, CY Lin, TH Yeh, CY Shou - physica status solidi (a), 2024 - Wiley Online Library
Selector devices have been incorporated in the resistance random access memory to
realize one‐selector‐one‐resistor device for the achievement of high‐density storage …

Effect of ZnO grain boundaries on non-linearity: First-principles calculations

Y Dai, Z Zhong, S Gong - Materials Research Express, 2018 - iopscience.iop.org
The non-linearity (NL) of monocrystal and polycrystal ZnO materials was studied on the
basis of density functional theory. Firstly, wurtzite ZnO was selected as a candidate material …

Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond

S Ban, J Lee, Y Seo, W Lee, T Kim… - Advanced Electronic … - Wiley Online Library
The explosive increase in the demand for data driven by advancements in artificial
intelligence technology and rapid expansion of data centers necessitates storage class …

基于NdxSm1−xNiO3金属绝缘体相变特性的温度传感阵列

鄢峰波, **子昂, 张豪, 崔雨晨, 聂开琪… - … Journal of Minerals …, 2024 - ijmmm.ustb.edu.cn
中文摘要在诸多电子相变材料中, 稀土镍基氧化物(RENiO 3) 具有宽温区可连续调控的金属
绝缘体相变(MIT) 特性, 在**关联逻辑器件, 突变式热敏电阻, 红外伪装等方面具有潜在应用价值 …