Recommended methods to study resistive switching devices
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
The resistive switching effect in memristors typically stems from the formation and rupture of
localized conductive filament paths, and HfO2 has been accepted as one of the most …
localized conductive filament paths, and HfO2 has been accepted as one of the most …
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …
and they have played a key role in the huge development that the semiconductor industry …
Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium
doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the …
doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the …
Defects in ferroelectric HfO 2
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of develo** competitive ferroelectric non-volatile memory devices. To date, it …
expectations of develo** competitive ferroelectric non-volatile memory devices. To date, it …
Graphene and related materials for resistive random access memories
Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …
resistive random access memories (RRAMs). Here, this emerging field is analyzed …
A review on resistive switching in high-k dielectrics: a nanoscale point of view using conductive atomic force microscope
M Lanza - Materials, 2014 - mdpi.com
Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for
next generation information storage, leading to great performance and fabrication-friendly …
next generation information storage, leading to great performance and fabrication-friendly …
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …