Electronic devices in space environments can contain numerous types of oxides and
insulators. Ionizing radiation can induce significant charge buildup in these oxides and …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Developments in the field of destructive single-event effects over the last 40 years are
reviewed. Single-event latchup, single-event burnout, single-event gate rupture, and single …

This document describes the radiation environments, physical mechanisms, and test
philosophies that underpin radiation hardness assurance test methodologies. The natural …

Exposure to radiation poses significant challenges for electronic devices, including
parametric degradation, loss of data, or catastrophic failure. The challenges and solutions …

The reliability of advanced integrated circuit (IC) technologies may be dominated by the
interaction of environmental radiation with the devices in the ICs. In particular, single event …

The radiation response and long term reliability of alternative gate dielectrics will play a
critical role in determining the viability of these materials for use in future space applications …

SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile
Memory Page 1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 53, NO. 6, DECEMBER …

Hafnium-silicate capacitors with 4.5-nm equivalent oxide thickness gate insulators were
irradiated with 10-keV X-rays. The midgap and flatband voltage shifts in these devices …

Heavy ion single-event measurements on a variety of high density commercial NAND and
NOR flash memories were reported. Three SEE phenomena were investigated: SEUs …