Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …

In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most
efficient alternative to conventional light sources. Yet, in comparison to other lighting …

Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …

With this study, we report on the reliability of the most recent commercial UVC LED devices.
The current COVID-19 pandemic urged the development of antiviral technologies, and one …

Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …

Solid-state light-emitting diodes (LEDs) emit nearly monochromatic light, yet seamless
tuning of emission color throughout the visible region remains elusive. Color-converting …

The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the
external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other …

Although high quantum efficiency has been achieved in large-sized InGaN/GaN LEDs
operating at relatively high current densities (above 35 A/cm2), the operating current density …

We present an atomistic theoretical study of the temperature dependence of the competition
between Auger and radiative recombination in c-plane (In, Ga) N/GaN quantum wells with …

Using time-resolved photoluminescence (PL) measurements, we present an experimental
verification for 100% internal quantum efficiency (IQE) of III-N quantum wells at low …