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New investigation of an E-mode metal-insulator-semiconductor AlInN/AlN/GaN HEMT with an Au-T-gate
A Babaya, A Saadi, S Bri - … Computing Electronics and Control …, 2021 - telkomnika.uad.ac.id
In a high electron mobility transistor (HEMT), the density of the two-dimensional electron gas
(2DEG) channel is modulated by the application of a bias to a Schottky metal gate. These …
(2DEG) channel is modulated by the application of a bias to a Schottky metal gate. These …