The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

We present a critical review of the strategies used in the fabrication of mismatched
semiconductor heterostructures. By using simple concepts derived from the Matthews model …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

With recent developments in high‐speed and high‐power electronics and Si‐based
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …

Demand for high-performance HgCdTe infrared detectors with larger array size and lower
cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice …

Building optoelectronic devices on a Si platform has been the engine behind the
development of Si photonics. In particular, the integration of optical interconnects onto Si …

We report measurements of the plastic relaxation of InGaAs layers grown above critical
thickness on GaAs substrates. The relaxation is accurately hyperbolic, proportional to the …

Two approaches to the growth of high-quality epitaxial Ge epilayers on (100) Si have been
investigated. The first consisted of compositional-grading Si1 _ x Gex layers and the use of …

We report accurate determination of the critical layer thickness (CLT) for single strained‐
layer epitaxy in the InGaAs/GaAs system. Our samples were molecular beam epitaxially …

In x Ga1− x As/GaAs (x≤ 0.25) strained layers grown by molecular‐beam epitaxy have been
examined by plan‐view transmission electron microscopy. Evidence is presented for the …