The authors of this article reported the effects of annealing on performance of GLAD
synthesized vertical p-NiO/n-β-Ga 2 O 3 heterostructure (HS) nanowire (NW) arrays based …

This article investigates the bipolar resistive switching behavior of bilayer Au/β-Ga 2 O 3/WO
3 thin film (TF)/Ag heterostructure memristor device deposited using an electron beam …

Abstract Undoped TiO 2 and Erbium doped TiO 2 nanowires (Er: TiO 2 NWs) were
synthesized on respective thin films using e-beam cum glancing angle deposition technique …

An instantaneous source of Indium (In) was used to dope the TiO 2 thin film (TF) on the Si
substrate. The X-ray diffraction depicted the presence of rutile phases of TiO 2, which shifted …

A unique vapour transport cum glancing angle deposition (VT-GLAD) technique was
employed to fabricate titanium dioxide (TiO 2) nanowires (NWs). The NWs were grown and …

The Er 2 O 3 nanowires (NWs) arrays were synthesized on Si substrate by Glancing angle
deposition technique. The field emission gun scanning electron microscopy showed the …

Zinc oxide (ZnO) has extensively exploited the material in the field of optoelectronics due to
its inherent wide bandgap and high electron mobility. Properties of ZnO is very sensitive to …

Using metatitanic acid (H 2 TiO 3) and silver nitrate (AgNO 3) as titanium precursor and
silver source respectively, a visible-light responsible Ag/TiO 2 heterojunction photocatalyst is …

SiO x–In 2− x O 3− y heterostructure nano-columnar arrays are synthesized on n-type Si
substrate by the glancing angle deposition technique. The transmission electron microscopy …

Abstract Vertically oriented TiO 2 nanowires (NWs) have been fabricated on graphene oxide
(GO) thin film (TF) using a catalytic free growth technique called glancing-angle deposition …