The purpose of this paper is to provide a comprehensive overview of the field‐effect
transistor (FET) small‐signal modeling using artificial neural networks (ANNs). To gain an in …

FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …

In this paper, we have studied the impact of various dielectric single-k (Sk) and dual-k (Dk)
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …

Multi‐fin devices are the most reliable option for terahertz (THz) frequency applications at
nano‐regime. In this work impact of spacer engineering on multi‐fin SOI FET performance is …

The FinFET architecture has attracted growing attention over the last two decades since its
invention, owing to the good control of the gate electrode over the conductive channel …

In the deep submicron regime, FinFET successfully suppresses the leakage current using a
3D fin-like channel substrate, which gets depleted and blocks possible leakage as the gate …

NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into
measurements, and the data are collected. By using the modified model, the measure data …

Current–voltage characteristic curves of NFinFET are presented and fitted with modified
current–voltage (IV) formulas, where the modified term in the triode region is demonstrated …

In this paper, silicon carbide‐based analytical model for gate‐stack dual metal nanowire
field effect transistor (gate‐stack DM NW FET) has been analyzed by solving the 2D …

Nowadays, FinFET represents a new and promising transistor structure for the aggressive
downscaling of the CMOS technology. Typically, the small-signal modeling for FinFET is …