State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
On-chip light sources for silicon photonics
Serving as the electrical to optical converter, the on-chip silicon light source is an
indispensable component of silicon photonic technologies and has long been pursued …
indispensable component of silicon photonic technologies and has long been pursued …
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
Achieving direct band gap in germanium through integration of Sn alloying and external strain
GeSn is predicted to exhibit an indirect to direct band gap transition at alloy Sn composition
of 6.5% and biaxial strain effects are investigated in order to further optimize GeSn band …
of 6.5% and biaxial strain effects are investigated in order to further optimize GeSn band …
Low-threshold optically pumped lasing in highly strained germanium nanowires
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
Direct bandgap group IV epitaxy on Si for laser applications
N Von Den Driesch, D Stange, S Wirths… - Chemistry of …, 2015 - ACS Publications
The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …
Group IV direct band gap photonics: methods, challenges, and opportunities
The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space map**
GA Chahine, MI Richard, RA Homs-Regojo… - Journal of Applied …, 2014 - journals.iucr.org
Numerous imaging methods have been developed over recent years in order to study
materials at the nanoscale. Within this context, scanning X-ray diffraction microscopy has …
materials at the nanoscale. Within this context, scanning X-ray diffraction microscopy has …
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …