Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Resistive switching (RS) devices, often referred to as memristors, have exhibited interesting
electronic performance that could be useful to enhance the capabilities of multiple types of …

Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …

The discovery of ferroelectricity in HfO 2-based thin films opens up new opportunities for
using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density …

Using density functional theory combined with an evolutionary algorithm, we investigate
ferroelectricity in substoichiometric HfO 2-δ with fixed composition δ= 0.25. We find that …

Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …

Graph neural networks (GNNs) have been shown to be extremely flexible and accurate in
predicting the physical properties of molecules and crystals. However, traditional invariant …

The discovery of ferroelectricity in both pure and doped HfO 2-based thin films have
revitalized interest in using ferroelectrics for nanoscale device applications. To take …

Abstract As ferroelectric Hf0. 5Zr0. 5O2 (HZO) thickness scales below 10 nm, the switching
characteristics are severely distorted typically showing an antiferroelectric-like behavior …

With the discovery of the ferroelectric (FE) properties within HfO2, the scaling gap between
state-of-the-art technology nodes and non-volatile memories based on FE materials can be …