Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Resistive switching materials for information processing
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
Spintronic devices: a promising alternative to CMOS devices
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …
a solution for the present-day problem of increased power dissipation in electronic circuits …
Control of magnetism by electric fields
The electrical manipulation of magnetism and magnetic properties has been achieved
across a number of different material systems. For example, applying an electric field to a …
across a number of different material systems. For example, applying an electric field to a …
Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …
research activity driven by its profound physics and enormous potential for application. This …
Electrical control of magnetism by electric field and current-induced torques
A Fert, R Ramesh, V Garcia, F Casanova… - ar** voltage-torque MRAM
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
Voltage-gate-assisted spin-orbit-torque magnetic random-access memory for high-density and low-power embedded applications
The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …
Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …