We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …

Nous présentons ici une revue de l'état de l'art actuel en matière de recherche fondamentale
sur les matériaux pour la spintronique. L'article est essentiellement dédié aux matériaux …

Transition metal doped III-V, II-VI, and group IV compounds offer an unprecedented
opportunity to explore ferromagnetism in semiconductors. Because ferromagnetic spin-spin …

Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …

Historically, comprehensive studies of dilute ferromagnetic semiconductors, eg, p-type (Cd,
Mn) Te and (Ga, Mn) As, paved the way for a quantitative theoretical description of effects …

Self-organized Ga (Mn) As nanoclusters, embedded in GaAs, were formed during post-
growth thermal annealing of Ga 1− x Mn x As layers. Structural and magnetic properties of …

Control of magnetic properties in diluted magnetic semiconductors (DMSs) using external
stimuli is a prerequisite for many spintronic applications. Fe-doped chalcogenide …

The effect of outdiffusion of Mn interstitials from (Ga, Mn) As epitaxial layers, caused by post-
growth low-temperature annealing, on their electronic-and band-structure properties has …

In this work it is demonstrated how in situ high-resolution X-ray diffraction (HRXRD),
performed during thermal annealing and employing a conventional laboratory source, can …

Thin Ga 0.94 Mn 0.06 As layers have been grown by low temperature molecular beam
epitaxy on (110) GaAs substrates and on [110] and [− 110] oriented GaAs cleaved edges …