The growing need for miniaturization in semiconductor devices has led to an increasing
interest in layered van der Waals (vdW) materials, which offer intriguing physics, atomically …

Abstract 2D materials, such as transition metal dichalcogenides, are ideal platforms for spin‐
to‐charge conversion (SCC) as they possess strong spin–orbit coupling (SOC), reduced …

Current silicon-based CMOS devices face physical limitations in downscaling size and
power loss, restricting their capability to meet the demands for data storage and information …

As a topological Dirac semimetal with controllable spin–orbit coupling and conductivity,
PtSe2, a transition-metal dichalcogenide, is a promising material for several applications …

Spintronics devices rely on the generation and manipulation of spin currents. Two-
dimensional transition-metal dichalcogenides (TMDs) are among the most promising …

Abstract Two-dimensional (2D) systems enable enhancing and diversifying the spin–orbit
coupling of carriers, a key factor for better charge–spin conversion efficiencies in modern …

Spin-to-charge conversion at the interface between magnetic materials and transition metal
dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow …

Mn3Sn is a non‐collinear antiferromagnetic quantum material that exhibits a magnetic Weyl
semimetallic state and has great potential for efficient memory devices. High‐quality …

The inverse Rashba-Edelstein effect (IREE) in a two-dimensional electron gas (2DEG)
induced by spin pum** from an adjacent ferromagnetic insulator (FI) is investigated …

Layered transition metal dichalcogenides (TMDs) have shown commendable properties for
spintronic applications. From the device perspective, the structural quality of the TMD as well …