The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …

Scaling trends of FinFET architecture, with focus on Front-End-of-Line (FEOL), and Middle-of-
Line (MOL) device parameters, is systematically investigated. It is concluded that the …

In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …

Carbon Nanotube Field-Effect Transistors (CNFETs) are highly promising to improve the
energy efficiency of digital logic circuits. Here, we quantify the Very-Large-Scale Integrated …

When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …

We report on the CMOS integration of vertically stacked gate-all-around (GAA) silicon
nanowire MOSFETs, with matched threshold voltages (V t, sat~ 0.35 V) for N-and P-type …

We report on CMOS-integrated vertically stacked gate-all-around (GAA) Si nanowire (NW)
MOSFETs with in-situ doped source-drain stressors and dual work function metal gates. We …

We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …