Micro‐light‐emitting diodes (Micro‐LEDs) based on gallium nitride (GaN) materials offer
versatile platforms for various applications, including displays, data communication tools …

Organolead trihalide perovskites have attracted great attention due to the stunning
advances in both photovoltaic and light-emitting devices. However, the photophysical …

6,599,362 B2 7/2003 Ashby et al. 6,847,057 B1 1/2005 Gardner et al. 7,091,514 B2 8, 2006
Craven et al. 7,186.302 B2 3/2007 Chakraborty et al. 7,575,947 B2 8, 2009 Iza et al …

BACKGROUND Certain optical systems, such as projection systems and automobile
headlights, require light Sources with high radi ance or luminance. Until recently, the …

6,051,849 A 4/2000 Davis et al. 6,153,010 A 11/2000 Kiyoku et al. 6,156,581 A 12/2000
Vaudo et al. 6,177,057 B1 1/2001 Purdy 6,177.292 B1 1/2001 Hong et al. 6,180,270 B1 …

Different techniques for epitaxial growth of gallium nitride and main properties of GaN layers
as well as devices made on the base of GaN-structures are described in the review. A new …

We report the fabrication of nonpolar m-plane InGaN/GaN multiple-quantum well light-
emitting diodes (LEDs) on free-standing m-plane GaN substrates. On-wafer continuous …

Nonpolar (11 2 0) a-plane InGaN∕ GaN multiple-quantum-well light-emitting diodes were
grown by metalorganic chemical vapor deposition on reduced-defect density hydride-vapor …

GaN is a unique material with outstanding optoelectronic properties and is suitable for
application in light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility …

(57) ABSTRACT A method of growing highly planar, fully transparent and specular m-plane
gallium nitride (GaN) films. The method provides for a significant reduction in structural …