Abstract Machine-learned force fields combine the accuracy of ab initio methods with the
efficiency of conventional force fields. However, current machine-learned force fields …

Here, we report the study of tautomerization within a single porphycene molecule adsorbed
on a Cu (111) surface using low-temperature scanning tunneling microscopy (STM) at 5 K …

We use electrostatic force microscopy to spatially resolve random telegraph noise at the
Si/SiO2 interface. Our measurements demonstrate that two-state fluctuations are localized at …

We report the study of single dangling bonds (DBs) on a hydrogen-terminated silicon (100)
surface using a low-temperature scanning tunneling microscope. By investigating samples …

Halogen monolayer on a silicon surface is attracting active attention for applications in
electronic device fabrication with individual impurities. To create a halogen mask for the …

The dynamics of hot electrons are central to understanding the properties of many electronic
devices. But their ultra-short lifetime, typically 100 fs or less, and correspondingly short …

The adsorption of diethyl ether (Et2O) on Si (001) was studied by means of scanning
tunneling microscopy (STM) and photoelectron spectroscopy. Et2O reacts on Si (001) via a …

The origin of bond-resolved atomic force microscope images remains controversial.
Moreover, most work to date has involved planar, conjugated hydrocarbon molecules on a …

Atomically precise dangling-bond (DB) lines are constructed dimer-by-dimer on a hydrogen-
passivated Ge (001)-(2× 1): H surface by an efficient scanning tunneling microscope (STM) …

Specific surfaces allowing the ultra-high vacuum (UHV) creation of electronic interconnects
and atomic nanostructures are required for the successful development of novel nanoscale …