This invention relates to semiconductor devices, particu larly to field-effect semiconductor
devices as typified by the high electron mobility transistor (HEMT), the two-dimen sional …

BACKGROUND GaN-based transistors are typically of the normally-on type due to the
spontaneous formation of a polarization doped two dimensional electron gas (2DEG) at the …

(57) ABSTRACT A semiconductor device includes a first semiconductor layer made of a
nitride semiconductor and formed on a Substrate, a second semiconductor layer made of a …

BACKGROUND One type of high-voltage FET is a heterostructure FET (HFET), also referred
to as a heterojunction or high-electron mobility transistor (HEMT). HFETs based on gallium …

(57) ABSTRACT A method for manufacturing a semiconductor device includes forming an
electron transit layer on a semiconductor Substrate, forming an electron Supply layer on the …

High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and
methods of manu facturing the same. A HEMT includes a source, a drain, a gate, a channel …

BACKGROUND 0002 One type of high-voltage FET is a heterostructure FET (HFET), also
referred to as a high-electron mobility transistor (HEMT). HFETs based on gallium nitride …

(57) ABSTRACT A High electron mobility transistor (HEMT) includes a Source electrode, a
gate electrode, a drain electrode, a channel forming layer in which a two-dimensional …

BACKGROUND The present disclosure relates to a semiconductor device. In line with the
development of communications technolo gies, heterojunction field effect transistors …

A semiconductor device includes: a semiconductor layer disposed above a substrate; an
insulating film formed by oxidizing a portion of the semiconductor layer; and an electrode …