[BOOK][B] Physics of semiconductors

M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

[HTML][HTML] Hall measurements on low-mobility thin films

F Werner - Journal of Applied Physics, 2017 - pubs.aip.org
We review the conventional measuring standard for dc Hall measurements in van der Pauw
configuration with particular focus on the challenges arising from a small Hall signal …

Electrodeposition conditions-dependent crystal structure, morphology and electronic properties of Bi films

A Fedotov, V Shendyukov, L Tsybulskaya… - Journal of Alloys and …, 2021 - Elsevier
The study is devoted to the electronic properties and structure of bismuth films obtained by
electrodeposition from high-speed perchlorate electrolyte. Polycrystalline samples were …

W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency

EH Aifer, JG Tischler, JH Warner, I Vurgaftman… - Applied physics …, 2006 - pubs.aip.org
Results are presented for an enhanced type-II W-structured superlattice (WSL) photodiode
with an 11.3 μ m cutoff and 34% external quantum efficiency (at 8.6 μ m⁠) operating at 80 …

Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES

AS Wadge, G Grabecki, C Autieri… - Journal of Physics …, 2022 - iopscience.iop.org
Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES -
IOPscience This site uses cookies. By continuing to use this site you agree to our use of cookies …

A class of high-mobility layered nanomaterials by design

DV Averyanov, IS Sokolov, OE Parfenov… - Journal of Materials …, 2023 - Elsevier
Abstract Design of materials with particular functional properties is indispensable albeit very
challenging. Chemical and structural analogies can be helpful in this endeavor, especially …

Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method

SB Lisesivdin, A Yildiz, N Balkan, M Kasap… - Journal of Applied …, 2010 - pubs.aip.org
We carried out the temperature (22–350 K) and magnetic field (0.05 and 1.4 T) dependent
Hall mobility and carrier density measurements on Al 0.22 Ga 0.78 N/GaN heterostructures …

Buried p-type layers in Mg-doped InN

PA Anderson, CH Swartz, D Carder, RJ Reeves… - Applied Physics …, 2006 - pubs.aip.org
Variable magnetic field Hall effect, photoluminescence, and capacitance-voltage (CV)
analysis have been used to study InN layers grown by plasma assisted molecular beam …

Layer-controlled evolution of electron state in the silicene intercalation compound SrSi 2

OE Parfenov, AN Taldenkov, DV Averyanov… - Materials …, 2022 - pubs.rsc.org
Silicene, a Si-based analogue of graphene, holds a high promise for electronics because of
its exceptional properties but a high chemical reactivity makes it a very challenging material …

Mobility spectrum computational analysis using a maximum entropy approach

S Kiatgamolchai, M Myronov, OA Mironov, VG Kantser… - Physical Review E, 2002 - APS
A method to calculate a smooth electrical conductivity versus mobility plot (“mobility
spectrum”) from the classical magnetoconductivity tensor in heterogeneous structures with …