Evolution of Low-Noise Avalanche Photodetectors Page 1 IEEE JOURNAL OF SELECTED
TOPICS IN QUANTUM ELECTRONICS, VOL. 28, NO. 2, MARCH/APRIL 2022 3800911 …

This book explains physical principles, unique benefits, broad categories, implementation
aspects, and performance criteria of distributed optical fiber sensors (DOFS). For each kind …

GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …

We report low-noise avalanche gain from photodiodes composed of a previously
uncharacterized alloy, Al 0.7 In 0.3 As 0.3 Sb 0.7, grown on GaSb. The bandgap energy and …

This paper presents the performance characteristics of InP-based pin photodiodes with
strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well …

Avalanche photodiodes (APDs) can amplify the weak optical signal as well as enable higher
receiver sensitivity due to the internal avalanche gain, but the impact ionization process can …

We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950–
1650 nm wavelength sensing applications. The APD is grown by molecular beam epitaxy on …

Mid-wavelength infrared (MWIR) detection is useful in a variety of scientific and military
applications. Avalanche photodiodes can provide an advantage for detection as their …

We report two InAs avalanche photodiode structures with very low background do** in the
depletion region. Uniform electric fields and thick depletion regions have been achieved …

A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs
diodes has been carried out, confirming that avalanche multiplication is dominated by the …