(57) ABSTRACT A method of making a bonded intermediate substrate includes forming a
Weak interface in a GaN source substrate by implanting ions into an N-terminated surface of …

(54) METHOD AND STRUCTURE FOR 6,033,974 A 3/2000 Henley et al. FABRICATING
MULTIPLETILED REGIONS 6,048,411 A* 4/2000 Henley et al............... 148,335 ONTO A …

(57) ABSTRACT A method for fabricating one or more devices, eg, inte grated circuits. The
method includes providing a substrate (eg, silicon), which has a thickness of semiconductor …

GaInP/GaAs//Si solar cells with three active pn junctions were fabricated by surface activated
direct wafer bonding between GaAs and Si. The direct wafer bond is performed at room …

(57) ABSTRACT A method includes growing a first epitaxial layer of III-nitride material,
forming a damaged region by implanting ions into an exposed Surface of the first epitaxial …

Fabrication methods and structures relating to backplanes for back contact solar cells that
provide for solar cell substrate reinforcement and electrical interconnects are described. The …

An inverted metamorphic multifunction Solar cell, and its method of fabrication, including an
upper Subcell, a middle Subcell, and a lower Subcell, including providing a first Sub strate …

(57) ABSTRACT A method of forming a multijunction Solar cell including an upper subcell, a
middle subcell, and a lower subcell, the method including: providing a Substrate for the …

(57) ABSTRACT A method of manufacturing a Solar cell by providing a first semiconductor
Substrate for the epitaxial growth of semicon ductor material; forming a first subcell on the …

A reusable silicon substrate device for use with layer transfer process. The device has a
reusable substrate having a surface region, a cleave region, and a total thickness of …