Computing with ferroelectric FETs: Devices, models, systems, and applications

A Aziz, ET Breyer, A Chen, X Chen… - … , Automation & Test …, 2018 - ieeexplore.ieee.org
In this paper, we consider devices, circuits, and systems comprised of transistors with
integrated ferroelectrics. Said structures are actively being considered by various …

Design and performance analysis of a GAA electrostatic doped negative capacitance vertical nanowire tunnel FET

A Bhardwaj, P Kumar, B Raj, S Anand - Journal of Electronic Materials, 2023 - Springer
An electrostatic doped vertical gate-all-around nanowire tunnel field effect transistor (ED-V-
GAA-NW-NC-TFET) is proposed with negative capacitance for performance enhancement …

A physics-based (Verilog-A) compact model for DC, quasi-static transient, small-signal, and noise analysis of MOSFET-based pH sensors

P Dak, W Seo, B Jung, MA Alam - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
High-resolution pH measurement is important for biomedical, food, pharmaceutical
industries as well as agricultural/environmental monitoring. Among the pH-meters, FET …

Unveiling the mechanism behind the negative capacitance effect in Hf0. 5Zr0. 5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid …

KJ Singh, LC Acharya, A Bulusu, S Dasgupta - Solid-State Electronics, 2024 - Elsevier
This paper addresses the lack of understanding of the origin of negative capacitance (NC)
effect in the hafnium zirconium oxide (HZO) ferroelectric (FE) gate stack and proposes a new …

[PDF][PDF] A verilog-A compact model for negative capacitance FET

MA Wahab, MA Alam - Update, 2017 - academia.edu
Continuous downscaling of the physical dimensions of MOSFET has helped increase
transistor density and improved the performance of the integrated circuit (IC). It has been …

Exploring pH Sensing in MoS2-Based ISFETs with 2D-3D Gate Oxide Stacks

S Sarath, RP Shukla, C Yadav… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
In this work, we present a theoretical investigation of the application of 2D oxides in 2D
channel material-based ISFETs for pH sensing applications. The investigation involved a …

Material, Device and Circuit-Compatible Modeling of Ferroelectric Devices

R Koduru, TK Paul, SK Gupta - IEEE Nanotechnology …, 2023 - ieeexplore.ieee.org
Ferroelectric devices have gained significant interest, owing to their diverse range of
applications in fields such as non-volatile memories, steep-slope transistors, neuromorphic …

Design considerations and emerging challenges for nanotube-, nanowire-, and negative capacitor-field effect transistors

MA Wahab - 2016 - search.proquest.com
As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs)
comes to an end, the semiconductor industry is beginning to adopt 3D device architectures …

Computing with Ferroelectric FETs

A Aziz, M Jerry, T Mikolajick, H Mulaosmanovic, K Ni… - 2018 - tud.qucosa.de
Abstract (EN) In this paper, we consider devices, circuits, and systems comprised of
transistors with integrated ferroelectrics. Said structures are actively being considered by …