InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
This article reviews the fundamental properties of InGaN materials. The growth kinetics
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …
Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
We report on an InGaN-based light-emitting diode (LED) with a top p-GaN surface
microroughened using the metal clusters as a wet etching mask. The light-output power for a …
microroughened using the metal clusters as a wet etching mask. The light-output power for a …
Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport
Q Lv, J Liu, C Mo, J Zhang, X Wu, Q Wu, F Jiang - Acs Photonics, 2018 - ACS Publications
The potential of multicolor semiconductor electroluminescence in solid-state lighting has
been extensively pursued due to the energy-saving and smart-lighting as compared to …
been extensively pursued due to the energy-saving and smart-lighting as compared to …
Nanoscale Raman map** of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC …
For the first time, a multilayer heterostructure consisting of periodically arranged GaN and
AlN layers was formed by chloride-hydride gas-phase epitaxy on a SiC/Si hybrid substrate …
AlN layers was formed by chloride-hydride gas-phase epitaxy on a SiC/Si hybrid substrate …
Improvement of green LED by growing p-GaN on In0. 25GaN/GaN MQWs at low temperature
The effect of temperature on the growth of p-GaN on In0. 25GaN/GaN multiple quantum well
(MQW) in a green light-emitting diode (LED) was investigated. p-GaN was grown at a low …
(MQW) in a green light-emitting diode (LED) was investigated. p-GaN was grown at a low …
Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition
W Lu, N Goto, H Murakami, N Sone, K Iida… - Applied Surface …, 2020 - Elsevier
Abstract Nonpolar GaInN/GaN multiple-quantum shells (MQSs) on nanowires (NWs) were
investigated for high-efficiency light-emitting diodes (LEDs). The growth conditions of NWs …
investigated for high-efficiency light-emitting diodes (LEDs). The growth conditions of NWs …
Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN∕ GaN multiple quantum wells
We reported the effect of the deposition time of barrier layers on optical and structural
properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells MQWs …
properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells MQWs …
Suppression the formation of V-pits in InGaN/GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes
J Yang, DG Zhao, DS Jiang, P Chen, JJ Zhu… - Journal of Alloys and …, 2020 - Elsevier
The mechanism for the formation of V-pits in InGaN/GaN multi-quantum well (MQW) growth
and its effect on the performance of GaN based laser diodes (LDs) are investigated in detail …
and its effect on the performance of GaN based laser diodes (LDs) are investigated in detail …
Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness
LC Le, DG Zhao, DS Jiang, L Li, LL Wu… - Journal of Applied …, 2013 - pubs.aip.org
The effect of quantum barrier (QB) thickness on performances of InGaN/GaN multiple-
quantum-well light-emitting diodes (MQW LEDs) with relatively large barrier layer …
quantum-well light-emitting diodes (MQW LEDs) with relatively large barrier layer …
Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells
MM Liang, GE Weng, JY Zhang, XM Cai… - Chinese …, 2014 - iopscience.iop.org
The structural and optical properties of InGaN/GaN multiple quantum wells (MQWs) with
different barrier thicknesses are studied by means of high resolution X-ray diffraction …
different barrier thicknesses are studied by means of high resolution X-ray diffraction …