[HTML][HTML] Fabrication of inversion channel diamond MOSFET with atomically step-free Al2O3/diamond interface
K Kobayashi, K Sato, H Kato, M Ogura, T Makino… - Carbon, 2025 - Elsevier
Diamond is a wide bandgap semiconductor and is expected to be applied to power and high-
frequency devices due to its high physical properties. In 2016, we reported the first inversion …
frequency devices due to its high physical properties. In 2016, we reported the first inversion …
Influence of nanodiamond on compressive and dry-sliding wear behaviors of Al2O3–Al interpenetrating-phase composites
H Zeinali-Moghaddam, G Roudini… - Diamond and Related …, 2024 - Elsevier
In this research, the effects of nanodiamond (ND) addition at different loadings on the
compressive and wear properties of the interpenetrating phases hybrid aluminum/alumina …
compressive and wear properties of the interpenetrating phases hybrid aluminum/alumina …
Micropatterning process of diamond substrates by stam** Ni imprint molds
T Matsumae, H Nishimori, Y Kurashima… - Diamond and Related …, 2025 - Elsevier
The manufacture of diamond devices requires a micropatterning process on diamond
substrates. Although conventional patterning processes involving photolithography are …
substrates. Although conventional patterning processes involving photolithography are …