(57) ABSTRACT A method of do** a FinFET includes forming a semicon ductor fin on a
Substrate, the Substrate having a first device region and a second device region. The …

The disclosure relates to a? n? eld effect transistor (FinFET). An exemplary structure for a
FinFET comprises a substrate comprising a top surface; a? rst insulation region and a sec …

(57) ABSTRACT A structure for a field effect transistor on a substrate that includes a gate
Stack, an isolation structure and a source/drain (S/D) recess cavity below the top surface of …

BACKGROUND As the integrated circuit size is reduced, there were efforts to overcome
problems faced with such size reduction. For example, the performance of a MOSFET is …

A Fin field effect transistor (FinFET) includes a fin-channel body over a substrate. A gate
electrode is disposed over the fin-channel body. At least one source/drain (S/D) region is …

6,858.478 B2 2/2005 Chaletal. 2005/0170593 A1 8/2005 Kang et al. 6872, 647 B1 3/2005
Yet al. 2005/0212080 A1 9, 2005 Wu et al. 6,940,747 B1 92005 Sharma et al …

(57) ABSTRACT A static RAM cell may be formed on the basis of two double channel
transistors and a select transistor, wherein a body contact may be positioned laterally …

An integrated circuit device includes a gate region extending above a semiconductor
substrate and extending in a first longitudinal direction. A first fin has a first sidewall that …

Non-planar transistors, such as FinFETs, may be formed in a bulk configuration in the
context of a replacement gate approach, wherein the semiconductor fins are formed during …

A method for producing a SiGe stressor with high Ge concentration is provided. The method
includes providing a semiconductor substrate with a source area, a drain area, and a …