Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4...

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Structural, chemical, optical, electrical and photodiode properties of Au/ZnPc/undoped-InP MPS-type diode using a ZnPc interlayer

AU Rani, DS Reddy, AA Kumar, VR Reddy - Materials Science and …, 2024 - Elsevier
This work explores the effect of zinc phthalocyanine (ZnPc) on the electrical properties of
Au/un-InP metal/semiconductor (MS) diode and characterizes its surface topography …
Mentés Hivatkozás Idézetek száma: 6 Kapcsolódó cikkek Mind a(z) 2 változat

Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti: DLC interlayer

EE Tanrıkulu, Ö Berkün, M Ulusoy, B Avar… - Materials Today …, 2024 - Elsevier
This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky
structure with Ti: DLC interlayer for a wide temperature interval (80–470 K). In the related …
Mentés Hivatkozás Idézetek száma: 11 Kapcsolódó cikkek Mind a(z) 2 változat

A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/GV) measurements in a wide range …

EE Tanrıkulu, ÇŞ Güçlü, Ş Altındal, H Durmuş - Measurement, 2024 - Elsevier
This study focused on revealing the temperature-sensing performance and rudimental
electrical-properties of the Au/(CdTe-PVA)/n-Si depending on the temperature via …
Mentés Hivatkozás Idézetek száma: 2 Kapcsolódó cikkek Mind a(z) 3 változat

Annealing temperature effect on structural, electronic features and current transport process of Au/CoPc/undoped-InP MPS-type Schottky structure

VR Reddy, AU Rani, S Ashajyothi, DS Reddy… - Journal of Molecular …, 2023 - Elsevier
The influence of annealing on structural, electronic features and the current transport
process of the Au/CoPc/undoped-InP (MPS)-type structure is explored. Raman …
Mentés Hivatkozás Idézetek száma: 8 Kapcsolódó cikkek Mind a(z) 2 változat

Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/n-GaN Schottky diode as an interlayer and its chemical and microstructural features

DS Reddy, VR Reddy, CJ Choi - Materials Science in Semiconductor …, 2024 - Elsevier
The work reveals the design of Au/dysprosium oxide (Dy 2 O 3)/n-GaN metal/insulator/
semiconductor (MIS)-type structures with a dysprosium oxide interlayer and investigates its …
Mentés Hivatkozás Idézetek száma: 6 Kapcsolódó cikkek

Temperature dependent electron transport and interface state studies on Ni/n-Si/Al/Ag lateral Schottky junction

G Bhattacharya, A Venimadhav - Microelectronics Reliability, 2024 - Elsevier
We investigate in this work, the electron transport characteristics across Ni/n-Si Schottky
junctions from temperature dependent current–voltage (IVT) and capacitance–voltage (CVT) …
Mentés Hivatkozás Idézetek száma: 5 Kapcsolódó cikkek Mind a(z) 2 változat

The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on …

B Akın, SA Hameed, SA Yerişkin, M Ulusoy… - Materials Science in …, 2024 - Elsevier
The current conduction mechanisms (CCMs), temperature-sensitivities (S), energy-
dependent interface traps (N ss), and origin of the intersection points in the forward bias (IF …
Mentés Hivatkozás Idézetek száma: 1 Kapcsolódó cikkek Mind a(z) 2 változat

On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode

M Mamor, K Bouziane, H Chakir, P Ruterana - Physica B: Condensed …, 2024 - Elsevier
Forward current-voltage (I–V) measurements of Pt/n-GaN Schottky barrier diode (SBD) are
investigated in a wide temperature range (80–400 K). The temperature dependence of the …
Mentés Hivatkozás Idézetek száma: 3 Kapcsolódó cikkek Mind a(z) 5 változat
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The study of the dependence of dielectric properties, electric modulus, and ac conductivity on the frequency and voltage in the Au/(CdTe: PVA)/n-Si (MPS) structures

ÇŞ Güçlü, Ş Altındal, M Ulusoy, AE Tezcan - Journal of Materials Science …, 2024 - Springer
The dielectric properties, electric modulus, loss tangent (tan δ), and ac conductivity of the
fabricated Au/(CdTe: PVA)/n-Si (MPS) structures were investigated in wide-range frequency …
Mentés Hivatkozás Idézetek száma: 2 Kapcsolódó cikkek Mind a(z) 4 változat
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Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses

S Agarwal, DK Dwivedi, P Lohia, SK Sharma… - Journal of Materials …, 2024 - Springer
In present work, electronic transport behavior of Te (1-x)(GeSe0. 5) Sc x (0≤ x≤ 0.15)
glasses have been studied. The material having disc shaped geometry have been utilized …
Mentés Hivatkozás Idézetek száma: 1 Kapcsolódó cikkek Mind a(z) 3 változat