The intensity of cosmic radiation may differ over five orders of magnitude within a few hours
or days during the Solar Particle Events (SPEs), thus increasing for several orders of …

This article presents a static random access memory (SRAM)-based flexible radiation
monitor. The monitor was fabricated in a 65-nm CMOS technology and it is designed as an …

The soft error rate (SER) of integrated circuits (ICs) operating in space environment may vary
by several orders of magnitude due to the variable intensity of radiation exposure. To ensure …

This article presents Listas de Eventos Localizando Anomalías al Preparar Estadísticas
(LELAPE), an easy-to-use tool that aims at classifying the single-event upsets (SEUs) that …

Cosmic radiation phenomena such as Solar Particle Events cause high radiation flux lasting
from hours to days, thus increasing the probability of Single-Event Upsets (SEUs) for several …

As a result of CMOS scaling, radiation-induced Single-Event Effects (SEEs) in electronic
circuits became a critical reliability issue for modern Integrated Circuits (ICs) operating under …

This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias
voltage of three generations of commercial off-the-shelf static random access memories …

Increased heavy ion single-event upset (SEU) sensitivity of radiation-harden 65-nm dual
interlocked cell (DICE) static random access memory (SRAM) is observed after total ionizing …

This paper presents a novel radiation monitor that is based on a custom static random
access memory (SRAM) application-specified integrated circuit. Its sensitivity is adjustable …

Effect of total ionizing dose (TID) on single-event upset (SEU) hardness of 130 nm partially
depleted (PD) silicon-on-insulator (SOI) static random access memories (SRAMs) is …