Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

Silicon oxide has been utilized as gate dielectric material for over 40 years [1]. However,
progressive minimization of transistor dimensions requires the gate oxide layers with very …

MHOS (metal-HfO 2–SiO 2–Si⁠) structure capacitors were fabricated to investigate the
charge trap** properties of HfO 2 layer with various thicknesses for the applications of …

A metal–insulator-semiconductor (MIS) structure holds great potential to promote
photoelectrochemical (PEC) reactions, such as water splitting and CO2 reduction, for the …

For Al 2 O 3 charge trap** analysis, Metal/Al 2 O 3/SiO 2/Si (MAOS) structures are
fabricated from atomic layer deposition and plasma enhanced chemical vapor deposition …

Optimization of equipment structure and process conditions is essential to obtain thin films
with the required properties, such as film thickness, trapped charge density, leakage current …

It is a well-known fact that the gate stacking is used to improve the electrostatic behavior of
Si 0.5 Ge 0.5 Junctionless Gate-All-Around (JL-GAA) MOSFETs. In gate stacking, the high-k …

This paper reports the use of a high-throughput sputtering technique for the fabrication of
high-entropy high-dielectric-constant (high-k) Ba (Ti, Zr, Ta, Hf, Mo) O 3 film libraries on Si …

Oxide dielectrics, such as HfO2, Al2O3, etc, are widely used to improve the performance of
2D semiconductors in electronic devices. However, future low‐power electronic devices …

ZrO 2 is a potential candidate for the realization of 3D capacitors on silicon for future
Systems-on-Chip. This paper reports on the deposition of ZrO 2 thin films by metal-organic …