Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …

Memristors, owing to their uncomplicated structure and resemblance to biological synapses,
are predicted to see increased usage in the domain of artificial intelligence. Additionally, to …

The development of artificial synaptic devices is a crucial step for the realization of efficient
bio-inspired neuromorphic computing systems. In this work, the bilayer ZrO 2/ZTO-based …

Metal oxides have broad multifunctionality and important applications to energy, sensing,
and information display. Printed electronics have recently adopted metal oxides to push the …

Abstract The HfO 2/TiO 2/HfO 2 trilayer-structure resistive random access memory (RRAM)
devices have been fabricated on Pt-and TiN-coated Si substrates with Pt top electrodes by …

We demonstrated the physical and electrical properties of the In–Ga–Zn–O (IGZO) thin films
prepared by atomic-layer deposition (ALD) method and investigated the effects of the ALD …

Technologies for human–machine interactions are booming now. In order to achieve
multifunctional sensing abilities of electronic skins, further developments of various sensors …

Although solution-processable high-k inorganic dielectrics have been implemented as a
gate insulator for high-performance, low-cost transition metal oxide field-effect transistors …

Ultra-high-resolution and flexible display applications require high-performance oxide thin
film transistors (TFTs) fabricated at low temperatures. This study fabricated low-temperature …

Abstract In this paper, Pt/AlO x/HfO x/TiN bilayer-structure memristors were fabricated by
atomic layer deposition. Some essential synaptic biological functions are achieved in such a …