(54) GALLIUM NITRIDE MATERIAL DEVICES 5,296,395 A 3, 1994 Khan et al. INCLUDING
AN ELECTRODE-DEFINING 5,389,571 A 2f1995 Takeuchi et al. LAYER AND METHODS …

4411, 741. A 10/1983 Janata associated with the same are provided. The sensors include
4,636,827 A 1, 1987 Rudolf regions that can interact with chemical species being 4, 791465 …

As noted above, the current best large-area GaN films are grown on Sapphire Substrates.
But, state-of-the-art Sapphire substrate size is relatively small and expensive. Further, the …

Ill-nitride material structures including silicon substrates, as Well as methods associated
With the same, are described. Parasitic losses in the structures may be signi? cantly reduced …

(54) METHOD FOR HETEROEPITAXIAL 6,051,849 A 4/2000 Davis et a1. GROWTH OF
HIGH-QUALITY N-FACE GAN, 6,064,078 A 5/2000 Northrup et a1, INN, AND AIN AND …

Methods of controlling stress in GaN? lms deposited on silicon and silicon carbide
substrates and the? lms produced therefrom are disclosed. A typical method comprises …

The invention provides Semiconductor materials including a gallium nitride material layer
formed on a Silicon Substrate and methods to form the Semiconductor materials. The …

Semiconductor materials including a gallium nitride mate rial region and methods
associated With such structures are provided. The semiconductor structures include a strain …

Gallium nitride material Structures, including devices, and methods associated with the
same are provided. In Some embodiments, the Structures include one or more isolation …

Gallium nitride materials include gallium nitride (GaN) and its alloys such as aluminum
gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride …